Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / RN2903FE(TE85L,F)
Herstellerteilenummer | RN2903FE(TE85L,F) |
---|---|
Zukünftige Teilenummer | FT-RN2903FE(TE85L,F) |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RN2903FE(TE85L,F) Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | 2 PNP - Pre-Biased (Dual) |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 22 kOhms |
Widerstand - Emitterbasis (R2) | 22 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 70 @ 10mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 250µA, 5mA |
Strom - Kollektorabschaltung (max.) | 100nA (ICBO) |
Frequenz - Übergang | 200MHz |
Leistung max | 100mW |
Befestigungsart | Surface Mount |
Paket / fall | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2903FE(TE85L,F) Gewicht | kontaktiere uns |
Ersatzteilnummer | RN2903FE(TE85L,F)-FT |
RN1605TE85LF
Toshiba Semiconductor and Storage
RN1606(TE85L,F)
Toshiba Semiconductor and Storage
RN1607(TE85L,F)
Toshiba Semiconductor and Storage
RN1611(TE85L,F)
Toshiba Semiconductor and Storage
RN2601(TE85L,F)
Toshiba Semiconductor and Storage
RN2603(TE85L,F)
Toshiba Semiconductor and Storage
RN2604(TE85L,F)
Toshiba Semiconductor and Storage
RN4606(TE85L,F)
Toshiba Semiconductor and Storage
RN4610(TE85L,F)
Toshiba Semiconductor and Storage
RN4611(TE85L,F)
Toshiba Semiconductor and Storage
XA2S150E-6FT256Q
Xilinx Inc.
XC3S4000L-4FGG900C
Xilinx Inc.
XC4020XL-3PQ208C
Xilinx Inc.
M2GL050-FGG484
Microsemi Corporation
APA1000-PQ208M
Microsemi Corporation
LCMXO1200E-3FTN256C
Lattice Semiconductor Corporation
XC7VX330T-2FF1157I
Xilinx Inc.
LFE3-17EA-7FN484C
Lattice Semiconductor Corporation
10AX115N2F45I2LG
Intel
EP3C40F324A7N
Intel