Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / RQJ0303PGDQA#H6
Herstellerteilenummer | RQJ0303PGDQA#H6 |
---|---|
Zukünftige Teilenummer | FT-RQJ0303PGDQA#H6 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RQJ0303PGDQA#H6 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3.3A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 68 mOhm @ 1.6A, 10V |
Vgs (th) (Max) @ Id | - |
Gateladung (Qg) (Max) @ Vgs | 12nC @ 10V |
Vgs (Max) | +10V, -20V |
Eingangskapazität (Ciss) (Max) @ Vds | 625pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 800mW (Ta) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 3-MPAK |
Paket / fall | TO-236-3, SC-59, SOT-23-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RQJ0303PGDQA#H6 Gewicht | kontaktiere uns |
Ersatzteilnummer | RQJ0303PGDQA#H6-FT |
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