Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SI1413EDH-T1-GE3
Herstellerteilenummer | SI1413EDH-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SI1413EDH-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SI1413EDH-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2.3A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 115 mOhm @ 2.9A, 4.5V |
Vgs (th) (Max) @ Id | 450mV @ 100µA (Min) |
Gateladung (Qg) (Max) @ Vgs | 8nC @ 4.5V |
Vgs (Max) | ±12V |
Eingangskapazität (Ciss) (Max) @ Vds | - |
FET-Funktion | - |
Verlustleistung (max.) | 1W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SC-70-6 (SOT-363) |
Paket / fall | 6-TSSOP, SC-88, SOT-363 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI1413EDH-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SI1413EDH-T1-GE3-FT |
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