Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SI5857DU-T1-E3
Herstellerteilenummer | SI5857DU-T1-E3 |
---|---|
Zukünftige Teilenummer | FT-SI5857DU-T1-E3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | LITTLE FOOT® |
SI5857DU-T1-E3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 6A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 58 mOhm @ 3.6A, 4.5V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 17nC @ 10V |
Vgs (Max) | ±12V |
Eingangskapazität (Ciss) (Max) @ Vds | 480pF @ 10V |
FET-Funktion | Schottky Diode (Isolated) |
Verlustleistung (max.) | 2.3W (Ta), 10.4W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PowerPAK® ChipFet Dual |
Paket / fall | PowerPAK® ChipFET™ Dual |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI5857DU-T1-E3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SI5857DU-T1-E3-FT |
TPC8A02-H(TE12L,Q)
Toshiba Semiconductor and Storage
TPC8A05-H(TE12L,QM
Toshiba Semiconductor and Storage
TPC8A06-H(TE12LQM)
Toshiba Semiconductor and Storage
ZDS020N60TB
Rohm Semiconductor
MCQ12N06-TP
Micro Commercial Co
MCQ4953-TP
Micro Commercial Co
MCQ4435-TP
Micro Commercial Co
MCQ4822-TP
Micro Commercial Co
MCQ9435-TP
Micro Commercial Co
MCQ4406-TP
Micro Commercial Co
A3P030-2QNG68I
Microsemi Corporation
A1425A-1PQ100I
Microsemi Corporation
XC4052XL-09HQ304C
Xilinx Inc.
A3P125-2PQ208I
Microsemi Corporation
A3P250L-VQG100I
Microsemi Corporation
EP3CLS100F484C7
Intel
EP2AGX125DF25C4N
Intel
EP2AGX65DF25C5
Intel
5CEBA5U19C8N
Intel
EP1C20F324I7N
Intel