Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SI5858DU-T1-GE3
Herstellerteilenummer | SI5858DU-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SI5858DU-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | LITTLE FOOT® |
SI5858DU-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 6A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 39 mOhm @ 4.4A, 4.5V |
Vgs (th) (Max) @ Id | 1V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 16nC @ 8V |
Vgs (Max) | ±8V |
Eingangskapazität (Ciss) (Max) @ Vds | 520pF @ 10V |
FET-Funktion | Schottky Diode (Isolated) |
Verlustleistung (max.) | 2.3W (Ta), 8.3W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PowerPAK® ChipFet Dual |
Paket / fall | PowerPAK® ChipFET™ Dual |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI5858DU-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SI5858DU-T1-GE3-FT |
ZDS020N60TB
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