Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / SI7998DP-T1-GE3
Herstellerteilenummer | SI7998DP-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SI7998DP-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SI7998DP-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Dual) |
FET-Funktion | Logic Level Gate |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 25A, 30A |
Rds On (Max) @ Id, Vgs | 9.3 mOhm @ 15A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 26nC @ 10V |
Eingangskapazität (Ciss) (Max) @ Vds | 1100pF @ 15V |
Leistung max | 22W, 40W |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | PowerPAK® SO-8 Dual |
Supplier Device Package | PowerPAK® SO-8 Dual |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI7998DP-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SI7998DP-T1-GE3-FT |
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