Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SIA437DJ-T1-GE3
Herstellerteilenummer | SIA437DJ-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SIA437DJ-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SIA437DJ-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 29.7A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 14.5 mOhm @ 8A, 4.5V |
Vgs (th) (Max) @ Id | 900mV @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 90nC @ 8V |
Vgs (Max) | ±8V |
Eingangskapazität (Ciss) (Max) @ Vds | 2340pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 3.5W (Ta), 19W (Tc) |
Betriebstemperatur | -50°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PowerPAK® SC-70-6 Single |
Paket / fall | PowerPAK® SC-70-6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIA437DJ-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SIA437DJ-T1-GE3-FT |
SQ4431EY-T1_GE3
Vishay Siliconix
SQ4470EY-T1_GE3
Vishay Siliconix
SQ4840EY-T1_GE3
Vishay Siliconix
SQ4850EY-T1_GE3
Vishay Siliconix
SQ9407EY-T1_GE3
Vishay Siliconix
TPC8014(TE12L,Q,M)
Toshiba Semiconductor and Storage
TPC8018-H(TE12LQM)
Toshiba Semiconductor and Storage
TPC8021-H(TE12LQ,M
Toshiba Semiconductor and Storage
TPC8022-H(TE12LQ,M
Toshiba Semiconductor and Storage
TPC8026(TE12L,Q,M)
Toshiba Semiconductor and Storage
LCMXO2-7000HE-6TG144I
Lattice Semiconductor Corporation
XC6SLX25-N3FGG484I
Xilinx Inc.
M2GL090T-FG484
Microsemi Corporation
M7A3P1000-PQ208
Microsemi Corporation
5SGXEB5R3F43C3N
Intel
XC4VFX40-10FF1152I
Xilinx Inc.
A40MX04-1PLG84M
Microsemi Corporation
A42MX16-2PL84I
Microsemi Corporation
LFXP2-30E-7FN484C
Lattice Semiconductor Corporation
5CGXFC4C6U19I7N
Intel