Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SIA443DJ-T1-GE3
Herstellerteilenummer | SIA443DJ-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SIA443DJ-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SIA443DJ-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 45 mOhm @ 4.7A, 4.5V |
Vgs (th) (Max) @ Id | 1V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 25nC @ 8V |
Vgs (Max) | ±8V |
Eingangskapazität (Ciss) (Max) @ Vds | 750pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 3.3W (Ta), 15W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PowerPAK® SC-70-6 Single |
Paket / fall | PowerPAK® SC-70-6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIA443DJ-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SIA443DJ-T1-GE3-FT |
SQ9407EY-T1_GE3
Vishay Siliconix
TPC8014(TE12L,Q,M)
Toshiba Semiconductor and Storage
TPC8018-H(TE12LQM)
Toshiba Semiconductor and Storage
TPC8021-H(TE12LQ,M
Toshiba Semiconductor and Storage
TPC8022-H(TE12LQ,M
Toshiba Semiconductor and Storage
TPC8026(TE12L,Q,M)
Toshiba Semiconductor and Storage
TPC8031-H(TE12LQM)
Toshiba Semiconductor and Storage
TPC8032-H(TE12LQM)
Toshiba Semiconductor and Storage
TPC8033-H(TE12LQM)
Toshiba Semiconductor and Storage
TPC8035-H(TE12L,QM
Toshiba Semiconductor and Storage
A1020B-VQG80I
Microsemi Corporation
XC6VLX75T-L1FFG484I
Xilinx Inc.
APA1000-BG456M
Microsemi Corporation
AGLN125V2-VQ100I
Microsemi Corporation
EP4CE75F23C8L
Intel
XC5VLX50-3FF676C
Xilinx Inc.
AGL060V2-CS121
Microsemi Corporation
EP20K400ERC240-1
Intel
EPF10K10QI208-4
Intel
EPF10K30AQC208-3N
Intel