Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SIDR668DP-T1-GE3
Herstellerteilenummer | SIDR668DP-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SIDR668DP-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® Gen IV |
SIDR668DP-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 23.2A (Ta), 95A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 7.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 20A, 10V |
Vgs (th) (Max) @ Id | 3.4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 108nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 5400pF @ 50V |
FET-Funktion | - |
Verlustleistung (max.) | 6.25W (Ta), 125W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PowerPAK® SO-8DC |
Paket / fall | PowerPAK® SO-8 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIDR668DP-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SIDR668DP-T1-GE3-FT |
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