Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / STI21N65M5
Herstellerteilenummer | STI21N65M5 |
---|---|
Zukünftige Teilenummer | FT-STI21N65M5 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | MDmesh™ V |
STI21N65M5 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 650V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 17A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 179 mOhm @ 8.5A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 50nC @ 10V |
Vgs (Max) | ±25V |
Eingangskapazität (Ciss) (Max) @ Vds | 1950pF @ 100V |
FET-Funktion | - |
Verlustleistung (max.) | 125W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | I2PAK |
Paket / fall | TO-262-3 Long Leads, I²Pak, TO-262AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
STI21N65M5 Gewicht | kontaktiere uns |
Ersatzteilnummer | STI21N65M5-FT |
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