Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / TK12Q60W,S1VQ
Herstellerteilenummer | TK12Q60W,S1VQ |
---|---|
Zukünftige Teilenummer | FT-TK12Q60W,S1VQ |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | DTMOSIV |
TK12Q60W,S1VQ Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 11.5A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 340 mOhm @ 5.8A, 10V |
Vgs (th) (Max) @ Id | 3.7V @ 600µA |
Gateladung (Qg) (Max) @ Vgs | 25nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 890pF @ 300V |
FET-Funktion | Super Junction |
Verlustleistung (max.) | 100W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | I-PAK |
Paket / fall | TO-251-3 Stub Leads, IPak |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TK12Q60W,S1VQ Gewicht | kontaktiere uns |
Ersatzteilnummer | TK12Q60W,S1VQ-FT |
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