Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / TPW1R306PL,L1Q
Herstellerteilenummer | TPW1R306PL,L1Q |
---|---|
Zukünftige Teilenummer | FT-TPW1R306PL,L1Q |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | U-MOSIX-H |
TPW1R306PL,L1Q Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 260A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.29 mOhm @ 50A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 91nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 8100pF @ 30V |
FET-Funktion | - |
Verlustleistung (max.) | 960mW (Ta), 170W (Tc) |
Betriebstemperatur | 175°C |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-DSOP Advance |
Paket / fall | 8-PowerVDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TPW1R306PL,L1Q Gewicht | kontaktiere uns |
Ersatzteilnummer | TPW1R306PL,L1Q-FT |
TPCA8065-H,LQ(S
Toshiba Semiconductor and Storage
TPCA8120,LQ(CM
Toshiba Semiconductor and Storage
TPCA8128,LQ(CM
Toshiba Semiconductor and Storage
TPCC8001-H(TE12LQM
Toshiba Semiconductor and Storage
TPCC8002-H(TE12L,Q
Toshiba Semiconductor and Storage
TPCC8002-H(TE12LQM
Toshiba Semiconductor and Storage
TPCC8003-H(TE12LQM
Toshiba Semiconductor and Storage
TPCC8005-H(TE12LQM
Toshiba Semiconductor and Storage
TPCC8006-H(TE12LQM
Toshiba Semiconductor and Storage
TPCC8A01-H(TE12LQM
Toshiba Semiconductor and Storage
LFXP3C-3TN100C
Lattice Semiconductor Corporation
XC2V4000-5FF1517I
Xilinx Inc.
A54SX72A-FGG256
Microsemi Corporation
M2GL025TS-VFG256
Microsemi Corporation
EP4CGX30CF23I7
Intel
5SGSED8N3F45I3LN
Intel
5SGXEB5R1F43I2N
Intel
AGL1000V5-FGG144I
Microsemi Corporation
LFE2M70SE-6FN900I
Lattice Semiconductor Corporation
EP4SGX70HF35C2G
Intel