Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / TSM80N1R2CH C5G
Herstellerteilenummer | TSM80N1R2CH C5G |
---|---|
Zukünftige Teilenummer | FT-TSM80N1R2CH C5G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
TSM80N1R2CH C5G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 800V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 5.5A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 2.75A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 19.4nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 685pF @ 100V |
FET-Funktion | - |
Verlustleistung (max.) | 110W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-251 (IPAK) |
Paket / fall | TO-251-3 Short Leads, IPak, TO-251AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TSM80N1R2CH C5G Gewicht | kontaktiere uns |
Ersatzteilnummer | TSM80N1R2CH C5G-FT |
TPCA8007-H(TE12L,Q
Toshiba Semiconductor and Storage
TPCA8010-H(TE12L,Q
Toshiba Semiconductor and Storage
TPH8R80ANH,L1Q
Toshiba Semiconductor and Storage
TPN4R303NL,L1Q
Toshiba Semiconductor and Storage
TPH5R906NH,L1Q
Toshiba Semiconductor and Storage
TPH7R506NH,L1Q
Toshiba Semiconductor and Storage
TPN7R506NH,L1Q
Toshiba Semiconductor and Storage
TPCA8028-H(TE12LQM
Toshiba Semiconductor and Storage
TPCA8045-H(T2L1,VM
Toshiba Semiconductor and Storage
TPCA8052-H(TE12LQM
Toshiba Semiconductor and Storage
AT40K05AL-1BQC
Microchip Technology
XC3S200AN-4FTG256I
Xilinx Inc.
A54SX32A-1FG144
Microsemi Corporation
EPF6010ATI100-2N
Intel
5SGXEABK3H40I4N
Intel
XC4005-5PC84C
Xilinx Inc.
XA7S25-1CSGA225Q
Xilinx Inc.
A42MX24-1PQG160M
Microsemi Corporation
LFE2-20SE-7FN672C
Lattice Semiconductor Corporation
EP1S20F780C6
Intel