Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / AUIRLR3114Z
Herstellerteilenummer | AUIRLR3114Z |
---|---|
Zukünftige Teilenummer | FT-AUIRLR3114Z |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET® |
AUIRLR3114Z Status (Lebenszyklus) | Auf Lager |
Teilestatus | Discontinued at Future Semiconductor |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 40V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 42A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.9 mOhm @ 42A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 100µA |
Gateladung (Qg) (Max) @ Vgs | 56nC @ 4.5V |
Vgs (Max) | ±16V |
Eingangskapazität (Ciss) (Max) @ Vds | 3810pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 140W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D-PAK (TO-252AA) |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
AUIRLR3114Z Gewicht | kontaktiere uns |
Ersatzteilnummer | AUIRLR3114Z-FT |
FQD6N50CTM
ON Semiconductor
FQD7N10LTM
ON Semiconductor
FQD7N20LTM
ON Semiconductor
FQD7N30TM
ON Semiconductor
FQD8P10TM
ON Semiconductor
FQD9N25TM-F080
ON Semiconductor
HUF75329D3ST
ON Semiconductor
HUF76609D3ST
ON Semiconductor
RFD16N05LSM9A
ON Semiconductor
2SJ377(TE16R1,NQ)
Toshiba Semiconductor and Storage
AT40K40AL-1BQI
Microchip Technology
XC4005XL-3PQ100C
Xilinx Inc.
APA600-BG456I
Microsemi Corporation
A42MX36-1PQG208I
Microsemi Corporation
EP2S15F484C3
Intel
EP1S10F484C7N
Intel
EP1K30FC256-2
Intel
EP2AGX45DF25I5
Intel
LFE2M70SE-6F900I
Lattice Semiconductor Corporation
LFXP2-5E-7M132C
Lattice Semiconductor Corporation