Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / BSM180D12P2C101
Herstellerteilenummer | BSM180D12P2C101 |
---|---|
Zukünftige Teilenummer | FT-BSM180D12P2C101 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
BSM180D12P2C101 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Half Bridge) |
FET-Funktion | Silicon Carbide (SiC) |
Drain-Source-Spannung (Vdss) | 1200V (1.2kV) |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 204A (Tc) |
Rds On (Max) @ Id, Vgs | - |
Vgs (th) (Max) @ Id | 4V @ 35.2mA |
Gateladung (Qg) (Max) @ Vgs | - |
Eingangskapazität (Ciss) (Max) @ Vds | 23000pF @ 10V |
Leistung max | 1130W |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | - |
Paket / fall | Module |
Supplier Device Package | Module |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSM180D12P2C101 Gewicht | kontaktiere uns |
Ersatzteilnummer | BSM180D12P2C101-FT |
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