Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / BSS84P-E6327
Herstellerteilenummer | BSS84P-E6327 |
---|---|
Zukünftige Teilenummer | FT-BSS84P-E6327 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | SIPMOS® |
BSS84P-E6327 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 170mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 8 Ohm @ 170mA, 10V |
Vgs (th) (Max) @ Id | 2V @ 20µA |
Gateladung (Qg) (Max) @ Vgs | 1.5nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 19pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 360mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SOT-23-3 |
Paket / fall | TO-236-3, SC-59, SOT-23-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSS84P-E6327 Gewicht | kontaktiere uns |
Ersatzteilnummer | BSS84P-E6327-FT |
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