Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / BZD27C7V5P-E3-18
Herstellerteilenummer | BZD27C7V5P-E3-18 |
---|---|
Zukünftige Teilenummer | FT-BZD27C7V5P-E3-18 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101, BZD27C |
BZD27C7V5P-E3-18 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 7.5V |
Toleranz | - |
Leistung max | 800mW |
Impedanz (max.) (Zzt) | 2 Ohms |
Strom - Rückwärtsleckage @ Vr | 50µA @ 3V |
Spannung - Vorwärts (Vf) (Max) @ If | 1.2V @ 200mA |
Betriebstemperatur | -65°C ~ 175°C |
Befestigungsart | Surface Mount |
Paket / fall | DO-219AB |
Supplier Device Package | DO-219AB (SMF) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZD27C7V5P-E3-18 Gewicht | kontaktiere uns |
Ersatzteilnummer | BZD27C7V5P-E3-18-FT |
BZD27C24P-M3-18
Vishay Semiconductor Diodes Division
BZD27C27P-E3-18
Vishay Semiconductor Diodes Division
BZD27C27P-HE3-18
Vishay Semiconductor Diodes Division
BZD27C27P-M3-08
Vishay Semiconductor Diodes Division
BZD27C27P-M3-18
Vishay Semiconductor Diodes Division
BZD27C30P-E3-18
Vishay Semiconductor Diodes Division
BZD27C30P-HE3-08
Vishay Semiconductor Diodes Division
BZD27C30P-HE3-18
Vishay Semiconductor Diodes Division
BZD27C30P-M3-08
Vishay Semiconductor Diodes Division
BZD27C30P-M3-18
Vishay Semiconductor Diodes Division
XC2V8000-5FFG1517I
Xilinx Inc.
XC3S200A-5VQ100C
Xilinx Inc.
M1A3P1000-1FGG484
Microsemi Corporation
M2GL010-1FG484I
Microsemi Corporation
A3P030-VQG100I
Microsemi Corporation
AT40K05LV-3DQI
Microchip Technology
EPF10K50SFC256-2
Intel
5SGXEA7K3F40I3
Intel
LFE2M70E-6F900C
Lattice Semiconductor Corporation
10AX090N4F45E3SG
Intel