Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / C3M0120090D
Herstellerteilenummer | C3M0120090D |
---|---|
Zukünftige Teilenummer | FT-C3M0120090D |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | C3M™ |
C3M0120090D Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | SiCFET (Silicon Carbide) |
Drain-Source-Spannung (Vdss) | 900V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 23A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 155 mOhm @ 15A, 15V |
Vgs (th) (Max) @ Id | 3.5V @ 3mA |
Gateladung (Qg) (Max) @ Vgs | 17.3nC @ 15V |
Vgs (Max) | +18V, -8V |
Eingangskapazität (Ciss) (Max) @ Vds | 350pF @ 600V |
FET-Funktion | - |
Verlustleistung (max.) | 97W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-247-3 |
Paket / fall | TO-247-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
C3M0120090D Gewicht | kontaktiere uns |
Ersatzteilnummer | C3M0120090D-FT |
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