Herstellerteilenummer | EPC2010 |
---|---|
Zukünftige Teilenummer | FT-EPC2010 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | eGaN® |
EPC2010 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Discontinued at Future Semiconductor |
FET-Typ | N-Channel |
Technologie | GaNFET (Gallium Nitride) |
Drain-Source-Spannung (Vdss) | 200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 12A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 6A, 5V |
Vgs (th) (Max) @ Id | 2.5V @ 3mA |
Gateladung (Qg) (Max) @ Vgs | 7.5nC @ 5V |
Vgs (Max) | +6V, -4V |
Eingangskapazität (Ciss) (Max) @ Vds | 540pF @ 100V |
FET-Funktion | - |
Verlustleistung (max.) | - |
Betriebstemperatur | -40°C ~ 125°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | Die |
Paket / fall | Die |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
EPC2010 Gewicht | kontaktiere uns |
Ersatzteilnummer | EPC2010-FT |
FDMS2734
ON Semiconductor
FDMS3572
ON Semiconductor
FDMS2572
ON Semiconductor
FDMS2672
ON Semiconductor
FDMS3672
ON Semiconductor
FDMS5672
ON Semiconductor
FQPF7N65CYDTU
ON Semiconductor
FQPF8N80CYDTU
ON Semiconductor
FQPF5N50CYDTU
ON Semiconductor
FQPF2N80YDTU
ON Semiconductor
A54SX32A-TQG176M
Microsemi Corporation
M1AFS250-FG256
Microsemi Corporation
APA600-FG676I
Microsemi Corporation
5SGSMD6K1F40C2LN
Intel
EP4SE360H29I3
Intel
5SGXEA7N3F45C2LN
Intel
LFXP2-30E-6FT256I
Lattice Semiconductor Corporation
EP2AGX45DF29I3
Intel
EPF10K10LC84-4N
Intel
EP4SGX360HF35I4
Intel