Herstellerteilenummer | FDZ201N |
---|---|
Zukünftige Teilenummer | FT-FDZ201N |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | PowerTrench® |
FDZ201N Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 18 mOhm @ 9A, 4.5V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 15nC @ 4.5V |
Vgs (Max) | ±12V |
Eingangskapazität (Ciss) (Max) @ Vds | 1127pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 2W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 12-BGA (2x2.5) |
Paket / fall | 12-WFBGA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDZ201N Gewicht | kontaktiere uns |
Ersatzteilnummer | FDZ201N-FT |
CTLDM7003-M621 TR
Central Semiconductor Corp
CTLDM7120-M621H BK
Central Semiconductor Corp
CTLDM8002A-M621 BK
Central Semiconductor Corp
CTLDM8002A-M621 TR
Central Semiconductor Corp
CTLDM8002A-M621H BK
Central Semiconductor Corp
CTLDM8002A-M621H TR
Central Semiconductor Corp
CTLDM8120-M621H BK
Central Semiconductor Corp
CTLDM8120-M621H TR
Central Semiconductor Corp
DMG10N60SCT
Diodes Incorporated
DMG3N60SJ3
Diodes Incorporated
EP1C6T144C6
Intel
LCMXO2-1200ZE-3TG144IR1
Lattice Semiconductor Corporation
A42MX09-FVQ100
Microsemi Corporation
EP4CE10E22C7N
Intel
XC5VLX30-1FF676I
Xilinx Inc.
AGL600V2-FG144
Microsemi Corporation
LCMXO2-7000HC-6BG256C
Lattice Semiconductor Corporation
LFXP2-8E-5MN132C
Lattice Semiconductor Corporation
5AGXMA1D4F31I3N
Intel
EP4CE55F29C6
Intel