Herstellerteilenummer | FDZ201N |
---|---|
Zukünftige Teilenummer | FT-FDZ201N |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | PowerTrench® |
FDZ201N Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 18 mOhm @ 9A, 4.5V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 15nC @ 4.5V |
Vgs (Max) | ±12V |
Eingangskapazität (Ciss) (Max) @ Vds | 1127pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 2W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 12-BGA (2x2.5) |
Paket / fall | 12-WFBGA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDZ201N Gewicht | kontaktiere uns |
Ersatzteilnummer | FDZ201N-FT |
CTLDM7003-M621 TR
Central Semiconductor Corp
CTLDM7120-M621H BK
Central Semiconductor Corp
CTLDM8002A-M621 BK
Central Semiconductor Corp
CTLDM8002A-M621 TR
Central Semiconductor Corp
CTLDM8002A-M621H BK
Central Semiconductor Corp
CTLDM8002A-M621H TR
Central Semiconductor Corp
CTLDM8120-M621H BK
Central Semiconductor Corp
CTLDM8120-M621H TR
Central Semiconductor Corp
DMG10N60SCT
Diodes Incorporated
DMG3N60SJ3
Diodes Incorporated
XC6SLX150-3FG676I
Xilinx Inc.
XC3S1400A-5FG484C
Xilinx Inc.
AGL600V5-FG484I
Microsemi Corporation
LAXP2-8E-5FTN256E
Lattice Semiconductor Corporation
LCMXO2-1200HC-5SG32C
Lattice Semiconductor Corporation
A40MX04-3PL68I
Microsemi Corporation
5SGSED8N2F45I2
Intel
5SGXEBBR2H43I3L
Intel
LFEC10E-3F256C
Lattice Semiconductor Corporation
EPF10K10QC208-3N
Intel