Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQD17N08LTM
Herstellerteilenummer | FQD17N08LTM |
---|---|
Zukünftige Teilenummer | FT-FQD17N08LTM |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQD17N08LTM Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 80V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 12.9A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 6.45A, 10V |
Vgs (th) (Max) @ Id | 2V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 11.5nC @ 5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 520pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 2.5W (Ta), 40W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQD17N08LTM Gewicht | kontaktiere uns |
Ersatzteilnummer | FQD17N08LTM-FT |
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