Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPI70N10S312AKSA1
Herstellerteilenummer | IPI70N10S312AKSA1 |
---|---|
Zukünftige Teilenummer | FT-IPI70N10S312AKSA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
IPI70N10S312AKSA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 70A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 11.6 mOhm @ 70A, 10V |
Vgs (th) (Max) @ Id | 4V @ 83µA |
Gateladung (Qg) (Max) @ Vgs | 66nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 4355pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 125W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | PG-TO262-3 |
Paket / fall | TO-262-3 Long Leads, I²Pak, TO-262AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPI70N10S312AKSA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPI70N10S312AKSA1-FT |
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