Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRFU3711PBF
Herstellerteilenummer | IRFU3711PBF |
---|---|
Zukünftige Teilenummer | FT-IRFU3711PBF |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET® |
IRFU3711PBF Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 100A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 15A, 10V |
Vgs (th) (Max) @ Id | 3V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 44nC @ 4.5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2980pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 2.5W (Ta), 120W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | IPAK (TO-251) |
Paket / fall | TO-251-3 Short Leads, IPak, TO-251AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFU3711PBF Gewicht | kontaktiere uns |
Ersatzteilnummer | IRFU3711PBF-FT |
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