Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRLI640GPBF
Herstellerteilenummer | IRLI640GPBF |
---|---|
Zukünftige Teilenummer | FT-IRLI640GPBF |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
IRLI640GPBF Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9.9A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4V, 5V |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 5.9A, 5V |
Vgs (th) (Max) @ Id | 2V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 66nC @ 10V |
Vgs (Max) | ±10V |
Eingangskapazität (Ciss) (Max) @ Vds | 1800pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 40W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220-3 |
Paket / fall | TO-220-3 Full Pack, Isolated Tab |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRLI640GPBF Gewicht | kontaktiere uns |
Ersatzteilnummer | IRLI640GPBF-FT |
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