Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / PSMN0R9-30YLDX
Herstellerteilenummer | PSMN0R9-30YLDX |
---|---|
Zukünftige Teilenummer | FT-PSMN0R9-30YLDX |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
PSMN0R9-30YLDX Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 300A |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 0.87 mOhm @ 25A, 10V |
Vgs (th) (Max) @ Id | 2.2V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 109nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 7668pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 291W |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | LFPAK56, Power-SO8 |
Paket / fall | SOT-1023, 4-LFPAK |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
PSMN0R9-30YLDX Gewicht | kontaktiere uns |
Ersatzteilnummer | PSMN0R9-30YLDX-FT |
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