Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / RJK03C1DPB-00#J5
Herstellerteilenummer | RJK03C1DPB-00#J5 |
---|---|
Zukünftige Teilenummer | FT-RJK03C1DPB-00#J5 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RJK03C1DPB-00#J5 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 60A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 2.2 mOhm @ 30A, 10V |
Vgs (th) (Max) @ Id | - |
Gateladung (Qg) (Max) @ Vgs | 42nC @ 4.5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 6000pF @ 10V |
FET-Funktion | Schottky Diode (Body) |
Verlustleistung (max.) | 65W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | LFPAK |
Paket / fall | SC-100, SOT-669 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RJK03C1DPB-00#J5 Gewicht | kontaktiere uns |
Ersatzteilnummer | RJK03C1DPB-00#J5-FT |
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