Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / RJK6002DPD-00#J2
Herstellerteilenummer | RJK6002DPD-00#J2 |
---|---|
Zukünftige Teilenummer | FT-RJK6002DPD-00#J2 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RJK6002DPD-00#J2 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 6.8 Ohm @ 1A, 10V |
Vgs (th) (Max) @ Id | - |
Gateladung (Qg) (Max) @ Vgs | 6.2nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 165pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 30W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | MP-3A |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RJK6002DPD-00#J2 Gewicht | kontaktiere uns |
Ersatzteilnummer | RJK6002DPD-00#J2-FT |
RJK5035DPP-E0#T2
Renesas Electronics America
RJK6006DPP-E0#T2
Renesas Electronics America
RJK6012DPP-E0#T2
Renesas Electronics America
RJK6013DPP-E0#T2
Renesas Electronics America
RJK6014DPP-E0#T2
Renesas Electronics America
RJK6035DPP-E0#T2
Renesas Electronics America
2SK3480-AZ
Renesas Electronics America
N0412N-S19-AY
Renesas Electronics America
RJK1003DPN-E0#T2
Renesas Electronics America
2SK3430-AZ
Renesas Electronics America
XC3S50A-4TQ144I
Xilinx Inc.
M1A3P400-FGG256
Microsemi Corporation
M1A3P250-2PQG208
Microsemi Corporation
EP3C40F484C7N
Intel
10M40SAE144I7G
Intel
5SGXEBBR1H43C2LN
Intel
LCMXO2-7000HE-4FG484C
Lattice Semiconductor Corporation
5CGXFC9C6F23I7N
Intel
EP20K200CB356C9
Intel
EPF8820AQC208-4AA
Intel