Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / XN0NE9200L
Herstellerteilenummer | XN0NE9200L |
---|---|
Zukünftige Teilenummer | FT-XN0NE9200L |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
XN0NE9200L Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 12V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1.2A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4V |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 800mA, 4V |
Vgs (th) (Max) @ Id | 1.3V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±15V |
Eingangskapazität (Ciss) (Max) @ Vds | - |
FET-Funktion | Schottky Diode (Isolated) |
Verlustleistung (max.) | 600mW (Ta) |
Betriebstemperatur | 125°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | Mini5-G1 |
Paket / fall | SC-74A, SOT-753 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
XN0NE9200L Gewicht | kontaktiere uns |
Ersatzteilnummer | XN0NE9200L-FT |
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