Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / ZXMN3A02N8TC
Herstellerteilenummer | ZXMN3A02N8TC |
---|---|
Zukünftige Teilenummer | FT-ZXMN3A02N8TC |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
ZXMN3A02N8TC Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 7.3A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 12A, 10V |
Vgs (th) (Max) @ Id | 1V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 26.8nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1400pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 1.56W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-SO |
Paket / fall | 8-SOIC (0.154", 3.90mm Width) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
ZXMN3A02N8TC Gewicht | kontaktiere uns |
Ersatzteilnummer | ZXMN3A02N8TC-FT |
DMTH6004SCTB-13
Diodes Incorporated
DMTH4004SCTBQ-13
Diodes Incorporated
DMTH4004SCTB-13
Diodes Incorporated
DMTH6004SCTBQ-13
Diodes Incorporated
IPB60R040C7ATMA1
Infineon Technologies
IPB60R060C7ATMA1
Infineon Technologies
IPB60R099C7ATMA1
Infineon Technologies
IPB60R120C7ATMA1
Infineon Technologies
IPB60R180C7ATMA1
Infineon Technologies
DMG4466SSS-13
Diodes Incorporated
A3PN015-1QNG68I
Microsemi Corporation
A1415A-PQ100I
Microsemi Corporation
M2GL025S-1VF400I
Microsemi Corporation
A10V20B-PL68C
Microsemi Corporation
EP4S100G3F45I3N
Intel
XC4028XL-09HQ208C
Xilinx Inc.
XC2VP2-6FFG672C
Xilinx Inc.
LCMXO640E-3MN100C
Lattice Semiconductor Corporation
EP3SE80F780C4
Intel
EPF10K30AQC208-1N
Intel