Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / EPC2100ENG
Herstellerteilenummer | EPC2100ENG |
---|---|
Zukünftige Teilenummer | FT-EPC2100ENG |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | eGaN® |
EPC2100ENG Status (Lebenszyklus) | Auf Lager |
Teilestatus | Discontinued at Future Semiconductor |
FET-Typ | 2 N-Channel (Half Bridge) |
FET-Funktion | GaNFET (Gallium Nitride) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 10A (Ta), 40A (Ta) |
Rds On (Max) @ Id, Vgs | 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V |
Vgs (th) (Max) @ Id | 2.5V @ 4mA, 2.5V @ 16mA |
Gateladung (Qg) (Max) @ Vgs | 4.9nC @ 15V, 19nC @ 15V |
Eingangskapazität (Ciss) (Max) @ Vds | 475pF @ 15V, 1960pF @ 15V |
Leistung max | - |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | Die |
Supplier Device Package | Die |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
EPC2100ENG Gewicht | kontaktiere uns |
Ersatzteilnummer | EPC2100ENG-FT |
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