Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FJ4B01100L1
Herstellerteilenummer | FJ4B01100L1 |
---|---|
Zukünftige Teilenummer | FT-FJ4B01100L1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
FJ4B01100L1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 12V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2.2A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 74 mOhm @ 1.5A, 4.5V |
Vgs (th) (Max) @ Id | 1V @ 1.2mA |
Gateladung (Qg) (Max) @ Vgs | 7nC @ 4.5V |
Vgs (Max) | ±8V |
Eingangskapazität (Ciss) (Max) @ Vds | 459pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 360mW (Ta) |
Betriebstemperatur | -40°C ~ 85°C (TA) |
Befestigungsart | Surface Mount |
Supplier Device Package | XLGA004-W-0808-RA01 |
Paket / fall | 4-XFLGA, CSP |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FJ4B01100L1 Gewicht | kontaktiere uns |
Ersatzteilnummer | FJ4B01100L1-FT |
H7N1002LS-E
Renesas Electronics America
H7N1002LSTL-E
Renesas Electronics America
HAF1002-90STL-E
Renesas Electronics America
RJK2006DPE-00#J3
Renesas Electronics America
RJK4013DPE-00#J3
Renesas Electronics America
RJK4512DPE-00#J3
Renesas Electronics America
RJK5012DPE-00#J3
Renesas Electronics America
RJK5013DPE-00#J3
Renesas Electronics America
RJK6012DPE-00#J3
Renesas Electronics America
RJK6013DPE-00#J3
Renesas Electronics America
XC2S200-5FGG456I
Xilinx Inc.
AX1000-2FGG484
Microsemi Corporation
LCMXO640E-5FTN256C
Lattice Semiconductor Corporation
EP1S20F672I7
Intel
XC7VX980T-1FFG1930C
Xilinx Inc.
A42MX16-PQG160I
Microsemi Corporation
LFE2-50E-6F484I
Lattice Semiconductor Corporation
LCMXO3L-2100C-5BG256I
Lattice Semiconductor Corporation
LFE3-35EA-7FN672I
Lattice Semiconductor Corporation
10AX057K4F40I3SG
Intel