Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FK4B01120L1
Herstellerteilenummer | FK4B01120L1 |
---|---|
Zukünftige Teilenummer | FT-FK4B01120L1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
FK4B01120L1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 12V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3.9A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 1.5A, 4.5V |
Vgs (th) (Max) @ Id | 1V @ 394µA |
Gateladung (Qg) (Max) @ Vgs | 7nC @ 4.5V |
Vgs (Max) | ±8V |
Eingangskapazität (Ciss) (Max) @ Vds | 490pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 370mW (Ta) |
Betriebstemperatur | -40°C ~ 85°C (TA) |
Befestigungsart | Surface Mount |
Supplier Device Package | ULGA004-W-1010-RA01 |
Paket / fall | 4-XFLGA, CSP |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FK4B01120L1 Gewicht | kontaktiere uns |
Ersatzteilnummer | FK4B01120L1-FT |
HAF1002-90STL-E
Renesas Electronics America
RJK2006DPE-00#J3
Renesas Electronics America
RJK4013DPE-00#J3
Renesas Electronics America
RJK4512DPE-00#J3
Renesas Electronics America
RJK5012DPE-00#J3
Renesas Electronics America
RJK5013DPE-00#J3
Renesas Electronics America
RJK6012DPE-00#J3
Renesas Electronics America
RJK6013DPE-00#J3
Renesas Electronics America
RJK6026DPE-00#J3
Renesas Electronics America
RJL5012DPE-00#J3
Renesas Electronics America
XCV50-6TQ144C
Xilinx Inc.
LCMXO2-256HC-4SG32C
Lattice Semiconductor Corporation
LFE5UM-45F-8BG554C
Lattice Semiconductor Corporation
M1AGL250V5-VQ100
Microsemi Corporation
EPF10K100ABC600-1
Intel
5SGXMA5K1F40C2LN
Intel
XC4013E-2HQ208I
Xilinx Inc.
XC2VP2-6FF672I
Xilinx Inc.
XC6SLX9-L1CPG196C
Xilinx Inc.
M1AGL1000V2-FGG144I
Microsemi Corporation