Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRF7701GTRPBF
Herstellerteilenummer | IRF7701GTRPBF |
---|---|
Zukünftige Teilenummer | FT-IRF7701GTRPBF |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET® |
IRF7701GTRPBF Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 12V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 10A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 10A, 4.5V |
Vgs (th) (Max) @ Id | 1.2V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 100nC @ 4.5V |
Vgs (Max) | ±8V |
Eingangskapazität (Ciss) (Max) @ Vds | 5050pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 1.5W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-TSSOP |
Paket / fall | 8-TSSOP (0.173", 4.40mm Width) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF7701GTRPBF Gewicht | kontaktiere uns |
Ersatzteilnummer | IRF7701GTRPBF-FT |
TK16G60W,RVQ
Toshiba Semiconductor and Storage
TK20G60W,RVQ
Toshiba Semiconductor and Storage
DMS2120LFWB-7
Diodes Incorporated
DMS2220LFW-7
Diodes Incorporated
PHM12NQ20T,518
NXP USA Inc.
PHM15NQ20T,518
NXP USA Inc.
PHM18NQ15T,518
NXP USA Inc.
PHM21NQ15T,518
NXP USA Inc.
PHM25NQ10T,518
NXP USA Inc.
PHM30NQ10T,518
NXP USA Inc.
XC3S200A-4FT256I
Xilinx Inc.
XC3S2000-4FG456C
Xilinx Inc.
A42MX09-VQ100I
Microsemi Corporation
AGL030V5-VQ100I
Microsemi Corporation
EP2C50F672I8
Intel
XC6SLX4-2CSG225I
Xilinx Inc.
AGL600V2-CSG281
Microsemi Corporation
LFXP6C-3Q208C
Lattice Semiconductor Corporation
LFXP2-40E-6F484I
Lattice Semiconductor Corporation
EP3SL50F780C4
Intel