Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRFD9020
Herstellerteilenummer | IRFD9020 |
---|---|
Zukünftige Teilenummer | FT-IRFD9020 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
IRFD9020 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1.6A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 280 mOhm @ 960mA, 10V |
Vgs (th) (Max) @ Id | 4V @ 1µA |
Gateladung (Qg) (Max) @ Vgs | 19nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 570pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 1.3W (Ta) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
Paket / fall | 4-DIP (0.300", 7.62mm) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFD9020 Gewicht | kontaktiere uns |
Ersatzteilnummer | IRFD9020-FT |
TK9A45D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK9A55DA(STA4,Q,M)
Toshiba Semiconductor and Storage
TK9A60D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK5Q65W,S1Q
Toshiba Semiconductor and Storage
TK8Q65W,S1Q
Toshiba Semiconductor and Storage
TK5Q60W,S1VQ
Toshiba Semiconductor and Storage
TK10Q60W,S1VQ
Toshiba Semiconductor and Storage
TK12Q60W,S1VQ
Toshiba Semiconductor and Storage
TK6Q60W,S1VQ
Toshiba Semiconductor and Storage
TK6Q65W,S1Q
Toshiba Semiconductor and Storage
XC3S50-4TQG144I
Xilinx Inc.
XC3S5000-4FGG676I
Xilinx Inc.
XC6SLX25-L1FG484I
Xilinx Inc.
A54SX16A-1FG256
Microsemi Corporation
MPF300T-1FCG1152E
Microsemi Corporation
AT6005LV-4AC
Microchip Technology
EP3SL200H780I4L
Intel
LFEC6E-3Q208I
Lattice Semiconductor Corporation
LFXP2-17E-6F484C
Lattice Semiconductor Corporation
10AX066K2F40E2LG
Intel